Characteristic features of the magnetoresistance of Pb1-xSnxTe(In) and Pb1-xMnxTe(In) alloys in ultrastrong magnetic fields
Identifieur interne : 001167 ( Russie/Analysis ); précédent : 001166; suivant : 001168Characteristic features of the magnetoresistance of Pb1-xSnxTe(In) and Pb1-xMnxTe(In) alloys in ultrastrong magnetic fields
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Abstract
The magnetoresistance of n- and p-type alloys Pb1-xSnxTe(In) with different compositions and of Pb1-xMnxTe(In) alloys in pulsed magnetic fields up to 40 T has been investigated. Localization of nonequilibrium charge carriers in a magnetic field has been observed in n- and p-type Pb1-xSnxTe(In). The amplitudes of a large-scale potential well in Pb1-xSnxTe(In) are estimated. A model which relates the localization mechanism to the tunneling of charge carriers from the allowed band to a single-electron metastable impurity state is proposed. A localization effect has not been observed in Pb1-xMnxTe(In). © 1996 American Institute of Physics.
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Lomonosov Moscow State University, 119899 Moscow</wicri:regionArea><placeName><settlement type="city">Moscou</settlement><region>District fédéral central</region></placeName></affiliation></author><author><name sortKey="Khokhlov, D R" uniqKey="Khokhlov D">D. R. Khokhlov</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>M. V. Lomonosov Moscow State University, 119899 Moscow, Russia</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>M. V. 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Localization of nonequilibrium charge carriers in a magnetic field has been observed in n- and p-type Pb<sub>1-x</sub>Sn<sub>x</sub>Te(In). The amplitudes of a large-scale potential well in Pb<sub>1-x</sub>Sn<sub>x</sub>Te(In) are estimated. A model which relates the localization mechanism to the tunneling of charge carriers from the allowed band to a single-electron metastable impurity state is proposed. A localization effect has not been observed in Pb<sub>1-x</sub>Mn<sub>x</sub>Te(In). © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>30</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characteristic features of the magnetoresistance of Pb<sub>1-x</sub>Sn<sub>x</sub>Te(In) and Pb<sub>1-x</sub>Mn<sub>x</sub>Te(In) alloys in ultrastrong magnetic fields</s1></fA08><fA11 i1="01" i2="1"><s1>DE VISSER (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>IVANCHIK (I. I.)</s1></fA11><fA11 i1="03" i2="1"><s1>KHOKHLOV (D. R.)</s1></fA11><fA14 i1="01"><s1>Physics Department, University of Amsterdam, Netherlands</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>M. V. 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A model which relates the localization mechanism to the tunneling of charge carriers from the allowed band to a single-electron metastable impurity state is proposed. 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